Work function of doped zinc oxide films deposited by ALD

Indium Doped Zinc Oxide Thin Films Deposited by Ultrasonic Chemical Spray Technique, Starting from Zinc Acetylacetonate and Indium Chloride

The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In) thin films, with electrical resistivity as low as 3.42 × 10-3 Ω·cm and high optical transmittance, in the visible range, of 50%-70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growt...

Study of Aluminum Oxide Films Deposited using Thermal ALD and Effect of Low Thermal Budget Annealing

Thermal ALD deposited Al2O3 films on silicon show marked difference in surface passivation quality as a function of annealing time (using rapid thermal process). An effective and quality passivation is realized in short anneal duration (~100s) which is reflected in the low surface recombination velocity (SRV <10 cm/s). The deduced values are close to the best reported SRV obtained by high therm...

Doped Zinc Oxide Thin Films as Transparent Conductive Electrodes

Sn doped ZnO thin films have been deposited on c-cut sapphire single crystal substrates at 200°C by pulsed electron beam deposition. The kinetic energies of the ions in the plasma plume determined from ion probe measurements, present a relatively broad distribution of the energies from a few eV to one hundred eV. Sn doped ZnO films have a graded composition, with a slightly in-depth variation o...

Cathodoluminescence Study of Gadolinium–Doped Yttrium Oxide Thin Films Deposited By Radio–Frequency Magnetron Sputtering

A multi–layer gadolinium–doped yttrium oxide thin film was deposited in a combinatorial fashion on a Si (001) substrate using radio–frequency magnetron sputtering. Alternating layers of Y2O3 and Gd were deposited for a total of 9 layers. The film was homogenized in composition by an 850 C 12 hour thermal treatment producing a range of composition from Y1.96Gd0.04O3 – Y1.54Gd0.46O3 in a single f...

Metal Oxide Thin Films and Nanostructures Made by ALD